Gallium nitride is ten times better than silicon now but could become 100 to 1000 times better to offset costs that are ten times higher

GaN field effect transistors (FETs) are now available as discrete transistors and as monolithic half-bridges, with performance 10 times better than the best commercial silicon MOSFET. But what happens when many devices are integrated to create a system on a single chip? What happens when the performance of that chip is 100 times better than silicon?

If we will look out 5 to 10 years we can easily see how a transformative change in semiconductor technology can transform our everyday world.

For the first time in 60 years, a new higher-performance semiconductor technology is less expensive to produce than the silicon counterpart. Gallium nitride (GaN), has demonstrated both a dramatic improvement in transistor performance and the ability to be produced at a lower cost than silicon. GaN transistors have unleashed new applications as a result of their ability to switch higher voltages and higher currents faster than any transistor before.

If we will look out 5 to 10 years we can easily see how a transformative change in semiconductor technology can transform our everyday world.

* no more wall sockets with wireless power transmission
* help make satellites ten times smaller
* no more colonoscopies with GaN in a pill


GaN Technology –Transforming the Future

Efficient Power Conversion (EPC), GaN Systems, Transphorm, and Panasonic are just a few of the companies working on widening the performance gap between GaN FETs from 10 times to 1000 times. As the performance gap widens and GaN technology is applied to more complex integrated circuits it will become the new building blocks for unforeseen applications.

It has previously been believed that GaN could become cheaper than silicon for performance and be a savior for Moore's Law

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